Micro LED Wafer Laser Lift Off Equipment
The equipment utilizes a deep ultraviolet laser, which is applied in the lift off of Micro LED Wafer and vertical structure LED wafers, to realize the separation of the GaN epitaxial layer and the sapphire substrate. The equipment comprises a self-frequency doubling unit, a laser scanning unit , automatic loading and unloading units.
Main Advantages
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01Equipped with precision high-speed mirror system, high efficiency and high precision machining
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02Autonomous Frequency Doubling Depth ultraviolet technology, crystal automatic point changing technology
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03Processing effect of low damage and high yield
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04All new dust-free design sealed optical system, longer optical device life
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Equipment Picture
Basic Parameters
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1. High processing efficiency:140s/pcs(4-inch wafer)
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2. Capability of coping with certain warping products:±300μm Focal depth
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3. Applicable wafer sizes: wafers within 6 inches
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4. Excellent processing effect: adopt deep UV PS DPSS laser
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5. Equipped with spot energy monitoring to ensure stable effect
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6. Easy maintenance of the equipment: utilizing bus control system and self-diagnosis system, with low failure rate, high stability and high maintainability
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7. Design/Manufacturing/Maintenance integration to ensure the consistency, stability and rapid responding of the equipment
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